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Room-temperature aluminum gallium arsenic antimonide/indium gallium arsenic antimonide heterojunction phototransistors for the 2 micron region
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Copyright Title

Room-temperature aluminum gallium arsenic antimonide/indium gallium arsenic antimonide heterojunction phototransistors for the 2 micron region

Status

Published

on 14 Apr 2009
Year of Creation
2008
Copyright Claimant
Krishna Swaminathan
Registration Number
TX0006657698
on 14 Apr 2009

Copyright Summary


The U.S. Copyright record (Registration Number: TX0006657698) dated 14 Apr 2009, pertains to an electronic file (eService) titled "Room-temperature aluminum gallium arsenic antimonide/indium gallium arsenic antimonide heterojunction phototransistors for the 2 micron region" created in 2008. The copyright holder is Krishna Swaminathan, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Krishna Swaminathan.

Copyright Details


Copyright Claimant
Krishna Swaminathan

Application Details


Registration Number
TX0006657698
Registration Date
4/14/2009
Year of Creation
2008
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Computer text data

Personal Authors


Notes


Rights Note: Rights and permissions info. on CORDS appl. in CO
Local Copyright Note: Electronic registration

Statements


Author Statement: entire text: Krishna Swaminathan
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