2012

Applying X-ray microscopy and finite element modeling (FEM) to identify the mechanism of stress-assisted void growth in through silicon via (TSV)

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Applying X-ray microscopy and finite element modeling (FEM) to identify the mechanism of stress-assisted void growth in through silicon via (TSV)

Status

Published

on 11 Apr 2012

Year of Creation

2011

Lay Wai Kong

Registration Number

TX0006740760

on 11 Apr 2012

The U.S. Copyright record (Registration Number: TX0006740760) dated 11 Apr 2012, pertains to an electronic file (eService) titled "Applying X-ray microscopy and finite element modeling (FEM) to identify the mechanism of stress-assisted void growth in through silicon via (TSV)" created in 2011. The copyright holder is Lay Wai Kong, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Lay Wai Kong.

Lay Wai Kong

Application Details

Registration Number

TX0006740760

Registration Date

4/11/2012

Year of Creation

2011

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Computer text data

Personal Authors

Lay Wai Kong

Notes

Rights Note: Rights and permissions info. on CORDS appl. in CO

Local Copyright Note: Electronic registration

Statements

Author Statement: entire text: Lay Wai Kong

Notes

Rights Note: Rights and permissions info. on CORDS appl. in CO

Local Copyright Note: Electronic registration

Statements

Author Statement: entire text: Lay Wai Kong

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