2007

Study on the Strontium bismuth tantalate (SBT) based ferroelectric gate FET for non-volatile non-destructive-read-out memory application

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Text Registration

Study on the Strontium bismuth tantalate (SBT) based ferroelectric gate FET for non-volatile non-destructive-read-out memory application

Status

Published

on 14 Jun 2007

Year of Creation

1997

Myoungho Lim

Registration Number

TX0004587985

on 14 Jun 2007

The U.S. Copyright record (Registration Number: TX0004587985) dated 14 Jun 2007, pertains to an electronic file (eService) titled "Study on the Strontium bismuth tantalate (SBT) based ferroelectric gate FET for non-volatile non-destructive-read-out memory application" created in 1997. The copyright holder is Myoungho Lim, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Myoungho Lim.

Myoungho Lim

Application Details

Registration Number

TX0004587985

Registration Date

6/14/2007

Year of Creation

1997

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Microfiche

Personal Authors

Myoungho Lim

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